Part Number Hot Search : 
MB84V OHGDCL LV8735V EL2250C DB0603N TFS70H11 190B0251 JE200G
Product Description
Full Text Search
 

To Download 2SB816 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB816
DESCRIPTION With TO-3PN package Complement to type 2SD1046 Wide area of safe operation APPLICATIONS For LF Power Amplifier, 50W Output Large Power Switching Applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION
Absolute maximum ratings(Tc=25ae )
SYMBOL VCBO VCEO VEBO IC ICP PC Tj Tstg PARAMETER

Collector-base voltage
IN
Collector-emitter voltage
Emitter-base voltage
ANG CH
EMIC ES
Open emitter Open base Open collector
CONDITIONS
OND
TOR UC
VALUE -150 -120 -6 -8 -12
UNIT V V V A A W ae ae
Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25ae
80 150 -40~150
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=-50mA ;RBE= IC=-5mA ;IE=0 IE=-5mA ;IC=0 IC=-5A; IB=-0.5A IC=-1A;VCE=-5V VCB=-80V; IE=0 VEB=-4V; IC=0 IC=-1A ; VCE=-5V IC=-5A ; VCE=-5V IC=-1A ; VCE=-5V 60 20 MIN -120 -150 -6 -1.0 TYP.
2SB816
SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB
MAX
UNIT V V V
-2.0 -1.5 -0.1 -0.1 200
V V mA mA
DC current gain
Transition frequency

Collector output capacitance
Switching times ton tstg tf
Turn-on time Storage time Fall time
HAN INC
SEM GE
f=1MHz;VCB=-10V
OND IC
TOR UC
15 220 0.22
MHz pF
|I |I |I
s s s
IC=-1.0A ;IB1=-IB2=-0.1A VCC=20V;RL=20|
0.93 0.37
hFE-1 Classifications D 60-120 E 100-200
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB816
SEM GE
HAN INC
OND IC
TOR UC
Fig.2 outline dimensions
3
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB816
SEM GE
HAN INC
OND IC
TOR UC
4


▲Up To Search▲   

 
Price & Availability of 2SB816

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X